Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
نویسندگان
چکیده
منابع مشابه
Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate Citation
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2019
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2019.2896156